PART |
Description |
Maker |
K3N5VU1000F-DGCTC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
MX29LV161BTI-70 MX29LV161BTI-70R MX29LV161BTI-90 M |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29LV160CTXBI-70 MX29LV160CBXBC-90G MX29LV160CBXB |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International http://
|
MX29LV161TXBC-70 MX29LV161BXBC-70 |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
MX26LV160ATXBC-70G MX26LV160ABXBC-70G MX26LV160ABX |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 55 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 55 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
http:// Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MBM29DL161TE-70 MBM29DL161TE-90 MBM29DL162TE-90 MB |
16M (2MX8/1MX16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 12 ns, PDSO48 TVS BIDIRECT 600W 48V SMB 16米(2米x 8/1M × 16)位双操 8 PORT MODULAR SWITCH 4 PORT 100MB MULTI-MODE FIBER BANDWIDTH MANAGER MODULE TP 16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
AC23C16200B |
1MX16/2MX8 BIT CMOS MASK ROM
|
List of Unclassifed Manufacturers ETC[ETC]
|
MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
MX29LV017BTI-90G 29LV017B-70 29LV017B-90 MX29LV017 |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
BS616LV1615 BS616LV1615FIP70 BS616LV1615FC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16 Asynchronous 16M(1Mx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY 16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL16x2T(ü)16兆位Mx8 Bit/1Mx16位)的CMOS 3.3伏只,同时闪电行
|
AMIC Technology Corporation AMIC Technology, Corp.
|